 Piezoresistive pressure sensors The piezoresistive principle is based on the semiconductor effect first described in 1954, which states that under mechanical stress semiconductors change their electrical resistance. Compared with the conventional strain gage measurement of the time, this opened up completely new applications. Since then similar breakthroughs have included the thin film technique on metal and its thick layer counterpart on ceramic. Piezoresistive sensors from Kistler measure static pressures in gases and liquids. The results achieved under even the most adverse conditions are precise and repeatable. » Piezoresistive technology
|